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平面NAND閃存時代落幕：鎧俠宣布停產2D NAND產品

平面NAND閃存時代落幕：鎧俠宣布停產2D NAND產品
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🏠閱讀原文： IT之家
#nand-flash#storage-eol#memory-shiftkioxia-nand-flashkioxia2d-nand3d-nand

💡2D NAND 2028年終結：鎧俠退出迫使AI基礎設施升級儲存堆疊（26字）

⚡ 30 秒速覽

有什麼變化

停產2009-2014年32nm SLC、24nm MLC、15nm MLC/TLC 2D NAND

為什麼重要

加速產業轉向3D NAND，對AI資料中心高容量儲存至關重要。嵌入式/AI邊緣舊2D NAND用戶須盡早遷移。

下一步行動

審核AI訓練/推論儲存中2D NAND，規劃2026年前遷移至3D。

誰應關注：Developers & AI Engineers

關鍵要點

  • •停產2009-2014年32nm SLC、24nm MLC、15nm MLC/TLC 2D NAND
  • •包含早期64層BiCS3 3D NAND及eMMC、UFS等所有封裝
  • •最後訂單：2026年9月30日；最終出貨：2028年12月31日
  • •AI需求暴漲令舊產線無經濟性

🧠 深度解析

本篇為 AI 生成分析，非原文內容。

🔑 增強重點摘要

  • •The phase-out strategy prioritizes the reallocation of legacy fab capacity toward high-bandwidth memory (HBM) and advanced 3D NAND nodes required for AI-driven data center workloads.
  • •Kioxia's decision reflects a broader industry trend where the cost-per-bit advantage of 2D NAND has been completely eclipsed by the scaling efficiency of high-layer-count 3D NAND architectures.
  • •The discontinuation includes specific legacy embedded storage solutions (eMMC/UFS) that have remained in demand for industrial and automotive applications, forcing these sectors to accelerate qualification of newer, more expensive 3D NAND alternatives.
📊 競品分析▸ Show
FeatureKioxia (Legacy 2D/Early 3D)Samsung (Legacy 2D/Early 3D)Micron (Legacy 2D/Early 3D)
StatusPhasing out by 2028Phasing out / Limited supportPhasing out / Limited support
FocusTransitioning to BiCS 8/9+Transitioning to V-NAND 9/10+Transitioning to Replacement Gate
Market StrategyAggressive legacy exitGradual legacy sunsetTargeted legacy exit

🛠️ 技術深入

  • 2D NAND (Planar) architecture relies on floating-gate transistors arranged in a single layer, which hit physical scaling limits below 15nm due to electron interference and cell-to-cell coupling.
  • BiCS (Bit Cost Scalable) technology utilizes a charge trap flash (CTF) structure, allowing for vertical stacking of memory cells to increase density without shrinking the horizontal lithography.
  • The transition involves moving from legacy 2D processes to advanced 3D NAND nodes that utilize wafer-to-wafer bonding and CMOS-under-array (CuA) architectures to maximize die efficiency.

🔮 前景展望基於引用來源的 AI 分析

Industrial and automotive component prices will rise significantly by 2027.
The forced migration of long-lifecycle products to newer 3D NAND architectures requires expensive re-qualification and redesign of existing hardware platforms.
Kioxia will increase its total bit-shipment capacity by 2029.
Converting legacy 2D fab space to high-density 3D NAND production significantly increases the total storage capacity output per square foot of cleanroom space.

⏳ 時間線

1987-01
Toshiba (now Kioxia) invents NAND flash memory.
2007-01
Introduction of the first 3D NAND concept by Toshiba.
2017-06
Kioxia (then Toshiba Memory) announces mass production of 64-layer BiCS FLASH.
2019-10
Toshiba Memory officially rebrands as Kioxia Corporation.
2023-03
Kioxia announces 218-layer 3D NAND technology.
🏠閱讀原文： IT之家
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